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Volumn 93, Issue 15, 2008, Pages

Improved characteristics and issues of m-plane InGaN films grown on low defect density m -plane freestanding GaN substrates by metalorganic vapor phase epitaxy

(7) Chichibu, S F a,b Yamaguchi, H b Zhao, L b Kubota, M b,c Onuma, T a,b Okamoto, K c Ohta, H c

a TOHOKU UNIVERSITY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c ROHM CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEFECT DENSITY; DIFFRACTION; GALLIUM NITRIDE; GROWTH KINETICS; SEMICONDUCTING GALLIUM; SUBSTRATES; VAPOR PHASE EPITAXY; VAPORS;

EDGE EMISSIONS; FREESTANDING GAN SUBSTRATES; GAN SUBSTRATES; M-PLANE; METALORGANIC; N FILMS; RADIATIVE LIFETIMES; ROCKING CURVES; STACKING; SURFACE FLATNESSES; SURFACE KINETICS; THREADING DISLOCATION DENSITIES;

GALLIUM ALLOYS;

EID: 54149110611 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2998580 Document Type: Article

Times cited : (28)

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