RLS tradeoff vs. quantum yield of high PAG EUV resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7271, Issue , 2009, Pages

  Higgins, Craig ^a   Antohe, Alin ^a   Denbeaux, Greg ^a   Kruger, Seth ^a   Georger, Jacque ^b   Brainard, Robert ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b SEMATECH   (United States)

Author keywords

EUV; Film quantum yield; RLS tradeoff; Ultra high PAG resists

Indexed keywords

13.5 NM; ABSORBANCE; ACID GENERATION; COUMARIN 6; DETECTION METHODS; EUV; EUV RESISTS; EXTREME ULTRAVIOLET; IODONIUM; LINE EDGE ROUGHNESS; PHOTOACID GENERATORS; RLS TRADEOFF; ULTRA HIGH PAG RESISTS; Z-PARAMETER;

ACIDS; COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRON BEAM LITHOGRAPHY; PHOTORESISTS; QUANTUM YIELD; SURFACE TREATMENT; TITRATION; ULTRAVIOLET DEVICES;

PHOTORESISTORS;

EID: 65849522023     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814307     Document Type: Conference Paper

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