Fundamental limits to EUV photoresist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 1, 2007, Pages

  Gallatin, Gregg M ^a   Naulleau, Patrick ^b,c   Brainard, Robert ^c  

^a Applied Math Solutions   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC ACID DIFFUSION; EUV PHOTORESIST; LINE EDGE ROUGHNESS (LER); RLS TRADEOFF;

EDGE DETECTION; EXTREME ULTRAVIOLET LITHOGRAPHY; OPTICAL RESOLVING POWER; SEMICONDUCTOR MATERIALS; SURFACE ROUGHNESS;

PHOTORESISTS;

EID: 35148886236     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712346     Document Type: Conference Paper

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