Contributions to innate material roughness in resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 II, Issue , 2006, Pages

  Roberts, Jeanette M ^a   Meagley, Robert ^a   Fedynyshyn, Theodore H ^b   Sinta, Roger F ^b   Astolfi, David K ^b   Goodman, Russell B ^b   Cabral, Alberto ^b  

^a INTEL CORPORATION   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

AFM; EUV; IMR; LER; LWR; Materials; PAG; Resist; Roughness

Indexed keywords

EUV; IMR; LER; LWR; PAG; RESISTS;

BYPRODUCTS; MATERIALS; PHOTOLYSIS; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

PHOTORESISTS;

EID: 33745628825     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.655740     Document Type: Conference Paper

References (3)

1. T. H. Fedynyshyn, R. F. Sinta, I. Pottebaum, and A. Cabral, "Resist materials for advanced lithography," vol. 5753, pp. 281-291, 2005.
2. T. H. Fedynyshyn, R. F. Sinta, A. Cabrai, D. K. Astolfi, J. M. Roberts, and R. Meagley, "Deconstructing the Resist to Probe Innate Material Roughness," Proceedings of the SPIE - The International Society for Optical Engineering, vol. 6153, 2006.
3. B. D. Bunday, M. Bishop, J. S. Villarrubia, and A. E. Vladar, "CD-SEM measurement line-edge roughness test patterns for 193-nm lithography," Proceedings of the SPIE, vol. 5038, pp. 674-688, 2003.