Film quantum yields of EUV & ultra-high PAG photoresists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Hassanein, Elsayed ^a   Higgins, Craig ^a   Naulleau, Patrick ^a   Matyi, Richard ^a   Gallatin, Gregg ^b   Denbeaux, Gregory ^a   Antohe, Alin ^a   Thackeray, Jim ^c   Spear, Kathleen ^c   Szmanda, Charles ^c   Anderson, Christopher N ^d   Niakoula, Dimitra ^d   Malloy, Matthew ^e   Khurshid, Anwar ^e   Montgomery, Cecilia ^e   Piscani, Emil C ^e   Rudack, Andrew ^e   Byers, Jeff ^e   Ma, Andy ^e   Dean, Kim ^e   Brainard, Robert ^a   more..

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b Applied Math Solutions LLC   (United States)

^c ROHM AND HAAS COMPANY   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^e SEMATECH   (United States)

Author keywords

Base titration; EUV; EUV 2D; Film quantum yield; Photoresists; Ultrahigh PAG resists

Indexed keywords

ABSORBANCES; BASE TITRATION; EUV; EUV-2D; IODONIUM; PHOTOACIDS; ULTRA-HIGH; ULTRAHIGH PAG RESISTS; X-RAY REFLECTOMETRY;

QUANTUM YIELD; TITRATION;

PHOTORESISTS;

EID: 50149087465     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.774099     Document Type: Conference Paper

References (23)

1. Resist performance has been named one of the three most critical barriers to successful implementation of EUV lithography during the last four annual EUV Lithography Symposiums.
2. Gallatin, G. M., Proc. SPIE, 5753, 38-52 (2005).
3. Gallatin, G. M., Naulleau, P., Brainard, R., "Fundamental limits to EUV photoresist, " Proc. SPIE, 6519, 6519111-65191110. (2007).
4. Gallatin, G. M., Naulleau, P., Brainard, R., Niakoula, D. and Dean, K., "Resolution, LER and Sensitivity Limitations of Photoresists, " EUV Symposium, Sapporo, Jpn (2007).
5. Brainard, R., Trefonas, P., Lammers, J., Cutler, C., Mackevich, J., Trefonas, A. and Robertson, S., Proc. SPIE, 5374, 74-85 (2004).
6. Brainard, R. L., Henderson, C., Cobb, J., Rao, V., Mackevich, J. F., Okoroanyanwu, U., Gunn, S., Chambers, J. and Connolly, S., "Comparison of the lithographic properties of positive resists upon exposure to deep- and extremeultraviolet radiation, " Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures, 17(6), 3384-3389 (1999).
7. Brainard, R. L., Barclay, G. G., Anderson, E. H., Ocola, L. E., "Resists for next generation lithography, ". Microelectronic Engineering, 61-62, 707-715 (2002). (Pubitemid 34613439)
8. Kozawa, T., Tagawa, S., "Basic aspects of acid generation processes in chemically amplified resists for electron beam lithography, " Proc. SPIE 5753(Pt. 1, Advances in Resist Technology and Processing XXII), 361-367 (2005). (Pubitemid 41275578)
9. Kozawa, T., Tagawa, S., "Basic aspects of acid generation processes in chemically amplified electron beam resist, " Journal of Photopolymer Science and Technology, 18(4), 471-474 (2005). (Pubitemid 40976903)
10. Tagawa, S., Nagahara, S., Iwamoto, T., Wakita, M., Kozawa, T., Yamamoto, Y., Werst, D. and Trifunac, A. D, "Radiation and photochemistry of onium salt acid generators in chemically amplified resists, " Proc. of SPIE-The International Society for Optical Engineering, 3999(Pt. 1, Advances in Resist Technology and Processing XVII), 204- 213 (2000).
11. Nakano, A., Okamoto, K., Yamamoto, Y., Kozawa, T., Tagawa, S., Kai, T., Nemoto, H., Shimokawa, T., "Deprotonation mechanism of poly(4- hydroxystyrene) and its derivative, " Proc. of SPIE-The International Society for Optical Engineering, 5753(Pt. 2, Advances in Resist Technology and Processing XXII), 1034-1039 (2005). (Pubitemid 41275520)
12. Kozawa, T., Saeki, A., Tagawa, S., "Modeling and simulation of chemically amplified electron beam, x-ray, and EUV resist processes." Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures- Processing, Measurement, and Phenomena, 22(6), 3489-3492 (2004). (Pubitemid 40185157)
13. Yamamoto, H., Kozawa, T., Nakano, A., Okamoto, K., Tagawa, S., Ando, T., Sato, M., Komano, H., "Dependence of acid generation efficiency on the protection ratio of hydroxyl groups in chemically amplified electron beam, x-ray and EUV resists, " Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures-Processing, Measurement, and Phenomena, 22(6), 3522-3524 (2004). (Pubitemid 40185164)
14. Kozawa, T., Saeki, A., Nakano, A., Yoshida, Y., Tagawa, S., "Relation between spatial resolution and reaction mechanism of chemically amplified resists for electron beam lithography, " Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures- Processing, Measurement, and Phenomena, 21(6), 3149-3152 (2003).
15. Szmanda, C. R, Brainard, R. L., Mackevich, J. F., Awaji, A., Tanaka, T., Yamada, Y., Bohland, J., Tedesco, S., Dal'Zotto, B., Bruenger, W., Torkler, M., Fallmann, W., Loeschner, H., Kaesmaier, R., Nealey, P. M., Pawloski, A. R., "Measuring acid generation efficiency in chemically amplified resists with all three beams, " Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures, 17(6), 3356-3361 (1999).
16. Roberts, J. M., Meagley, R, Fedynyshyn, T. H., Sinta, R. F., Astolfi, D. K., Goodman, R. B., Cabral, A., "Contributions to innate material roughness in resist, " Proc. of SPIE, 6153, 61533U1-61533U11 (2006).
17. Fedynyshyn, T.H., Astolfi, D. K., Cabral, A. and Roberts, J., "PAG segregation during exposure affecting innate material roughness, " Proc. SPIE, 6519, 65190X (2007).
18. Woodward, J. T., Fedynyshyn, T. H., Astolfi, D. K., Cann, S., Roberts, J. M., Leeson, M. J., "Component segregation in model chemically amplified resists, " Proc. of SPIE, 6519, 6519151-6519158 (2007).
19. Fedynyshyn, T. H., Pottebaum, I., Cabral, A., Roberts, J., "Changes in resist glass transition temperatures due to exposure, " Proc. of SPIE, 6519, 6519171-65191712 (2007).
20. Patrick Naulleau, personal communication.
21. Chandhok, M., Cao, H., Wang, Y., Gullikson, E. M., Brainard, R. L., Robertson, S. A., "Techniques for directly measuring the absorbance of photoresists at EUV wavelengths, " Proc. of SPIE, 5374(Pt. 2, Emerging Lithographic Technologies VIII), 861-868 (2004).
22. Contrast curve experiments were conducted during January 2008. Patrick Naulleau announced during the EUVI Resist workshop, SPIE 2/28, to bring exposures in line with recent calibration experiments, doses determined prior to 2/28 should be divided by 1.9.
23. CXRO website: http://henke.lbl.gov/optical-constants. Also see: Henke, B. L., Gullikson, E. M. and Davis, J. C., "X-ray interactions: photoabsorption, scattering, transmission, and reflection at E=50-30000 eV, Z=1-92, " Atomic Data and Nuclear Data Tables Vol. 54 (no.2), 181-342 (July 1993).