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1
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50149106926
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Resist performance has been named one of the three most critical barriers to successful implementation of EUV lithography during the last four annual EUV Lithography Symposiums, 2004-2007
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Resist performance has been named one of the three most critical barriers to successful implementation of EUV lithography during the last four annual EUV Lithography Symposiums, 2004-2007.
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3
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35148886236
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Fundamental limits to EUV photoresist
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Gallatin, G. M., Naulleau, P., Brainard, R., "Fundamental limits to EUV photoresist," Proc. SPIE, 6519, 651911/1-651911/10. (2007).
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(2007)
Proc. SPIE, 6519, 651911/1-651911/10
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Gallatin, G.M.1
Naulleau, P.2
Brainard, R.3
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4
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50149100653
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Resolution, LER and Sensitivity Limitations of Photoresists
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Sapporo, Jpn
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Gallatin, G. M., Naulleau, P., Brainard, R., Niakoula, D. and Dean, K., "Resolution, LER and Sensitivity Limitations of Photoresists," EUV Symposium, Sapporo, Jpn (2007).
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(2007)
EUV Symposium
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Gallatin, G.M.1
Naulleau, P.2
Brainard, R.3
Niakoula, D.4
Dean, K.5
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5
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3843087239
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Brainard, R., Trefonas, P., Lammers, J., Cutler, C., Mackevich, J., Trefonas, A. and Robertson, S., Proc. SPIE, 5374, 74-85 (2004).
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(2004)
Proc. SPIE
, vol.5374
, pp. 74-85
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Brainard, R.1
Trefonas, P.2
Lammers, J.3
Cutler, C.4
Mackevich, J.5
Trefonas, A.6
Robertson, S.7
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6
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0040707392
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Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation
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Brainard, R. L., Henderson, C., Cobb, J., Rao, V., Mackevich, J. F., Okoroanyanwu, U., Gunn, S., Chambers, J. and Connolly, S., "Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation," Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures, 17(6), 3384-3389 (1999).
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(1999)
Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures
, vol.17
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, pp. 3384-3389
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Brainard, R.L.1
Henderson, C.2
Cobb, J.3
Rao, V.4
Mackevich, J.F.5
Okoroanyanwu, U.6
Gunn, S.7
Chambers, J.8
Connolly, S.9
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7
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10444235423
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Resists for next generation lithography,
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Brainard, R. L., Barclay, G. G., Anderson, E. H., Ocola, L. E., "Resists for next generation lithography,". Microelectronic Engineering, 61-62, 707-715 (2002).
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(2002)
Microelectronic Engineering
, vol.61-62
, pp. 707-715
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Brainard, R.L.1
Barclay, G.G.2
Anderson, E.H.3
Ocola, L.E.4
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8
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24644511335
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Kozawa, T., Tagawa, S., Basic aspects of acid generation processes in chemically amplified resists for electron beam lithography, Proc. SPIE 5753(Pt. 1, Advances in Resist Technology and Processing XXII), 361-367 (2005).
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Kozawa, T., Tagawa, S., "Basic aspects of acid generation processes in chemically amplified resists for electron beam lithography," Proc. SPIE 5753(Pt. 1, Advances in Resist Technology and Processing XXII), 361-367 (2005).
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9
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22144475466
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Basic aspects of acid generation processes in chemically amplified electron beam resist
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Kozawa, T., Tagawa, S., "Basic aspects of acid generation processes in chemically amplified electron beam resist," Journal of Photopolymer Science and Technology, 18(4), 471-474 (2005).
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(2005)
Journal of Photopolymer Science and Technology
, vol.18
, Issue.4
, pp. 471-474
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Kozawa, T.1
Tagawa, S.2
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10
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0033690836
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Tagawa, S., Nagahara, S., Iwamoto, T., Wakita, M., Kozawa, T., Yamamoto, Y., Werst, D. and Trifunac, A. D, Radiation and photochemistry of onium salt acid generators in chemically amplified resists, Proc. of SPIE-The International Society for Optical Engineering, 3999(Pt. 1, Advances in Resist Technology and Processing XVII), 204-213 (2000).
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Tagawa, S., Nagahara, S., Iwamoto, T., Wakita, M., Kozawa, T., Yamamoto, Y., Werst, D. and Trifunac, A. D, "Radiation and photochemistry of onium salt acid generators in chemically amplified resists," Proc. of SPIE-The International Society for Optical Engineering, 3999(Pt. 1, Advances in Resist Technology and Processing XVII), 204-213 (2000).
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11
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24644433773
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Nakano, A., Okamoto, K., Yamamoto, Y., Kozawa, T., Tagawa, S., Kai, T., Nemoto, H., Shimokawa, T., Deprotonation mechanism of poly(4- hydroxystyrene) and its derivative, Proc. of SPIE-The International Society for Optical Engineering, 5753(Pt. 2, Advances in Resist Technology and Processing XXII), 1034-1039 (2005).
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Nakano, A., Okamoto, K., Yamamoto, Y., Kozawa, T., Tagawa, S., Kai, T., Nemoto, H., Shimokawa, T., "Deprotonation mechanism of poly(4- hydroxystyrene) and its derivative," Proc. of SPIE-The International Society for Optical Engineering, 5753(Pt. 2, Advances in Resist Technology and Processing XXII), 1034-1039 (2005).
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12
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13244273811
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Modeling and simulation of chemically amplified electron beam, x-ray, and EUV resist processes
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Kozawa, T., Saeki, A., Tagawa, S., "Modeling and simulation of chemically amplified electron beam, x-ray, and EUV resist processes." Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena, 22(6), 3489-3492 (2004).
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(2004)
Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena
, vol.22
, Issue.6
, pp. 3489-3492
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Kozawa, T.1
Saeki, A.2
Tagawa, S.3
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13
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13244297065
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Dependence of acid generation efficiency on the protection ratio of hydroxyl groups in chemically amplified electron beam, x-ray and EUV resists
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Yamamoto, H., Kozawa, T., Nakano, A., Okamoto, K., Tagawa, S., Ando, T., Sato, M., Komano, H., "Dependence of acid generation efficiency on the protection ratio of hydroxyl groups in chemically amplified electron beam, x-ray and EUV resists," Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures-Processing, Measurement, and Phenomena, 22(6), 3522-3524 (2004).
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(2004)
Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures-Processing, Measurement, and Phenomena
, vol.22
, Issue.6
, pp. 3522-3524
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Yamamoto, H.1
Kozawa, T.2
Nakano, A.3
Okamoto, K.4
Tagawa, S.5
Ando, T.6
Sato, M.7
Komano, H.8
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14
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0942289187
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Relation between spatial resolution and reaction mechanism of chemically amplified resists for electron beam lithography
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Kozawa, T., Saeki, A., Nakano, A., Yoshida, Y., Tagawa, S., "Relation between spatial resolution and reaction mechanism of chemically amplified resists for electron beam lithography," Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena, 21(6), 3149-3152 (2003).
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(2003)
Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena
, vol.21
, Issue.6
, pp. 3149-3152
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Kozawa, T.1
Saeki, A.2
Nakano, A.3
Yoshida, Y.4
Tagawa, S.5
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15
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33745628825
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Contributions to innate material roughness in resist
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Roberts, J. M., Meagley, R, Fedynyshyn, T. H., Sinta, R. F., Astolfi, D. K., Goodman, R. B., Cabral, A., "Contributions to innate material roughness in resist," Proc. of SPIE, 6153, 61533U/1-61533U/11 (2006).
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(2006)
Proc. of SPIE, 6153, 61533U/1-61533U/11
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Roberts, J.M.1
Meagley, R.2
Fedynyshyn, T.H.3
Sinta, R.F.4
Astolfi, D.K.5
Goodman, R.B.6
Cabral, A.7
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16
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35148835285
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PAG segregation during exposure affecting innate material roughness
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Fedynyshyn, T.H., Astolfi, D. K., Cabral, A. and Roberts, J., "PAG segregation during exposure affecting innate material roughness," Proc. SPIE, 6519, 65190X (2007).
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(2007)
Proc. SPIE
, vol.6519
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Fedynyshyn, T.H.1
Astolfi, D.K.2
Cabral, A.3
Roberts, J.4
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17
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35148867133
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Component segregation in model chemically amplified resists
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Woodward, J. T., Fedynyshyn, T. H., Astolfi, D. K., Cann, S., Roberts, J. M., Leeson, M. J., "Component segregation in model chemically amplified resists," Proc. of SPIE, 6519, 651915/1-651915/8 (2007).
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(2007)
Proc. of SPIE, 6519, 651915/1-651915/8
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Woodward, J.T.1
Fedynyshyn, T.H.2
Astolfi, D.K.3
Cann, S.4
Roberts, J.M.5
Leeson, M.J.6
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18
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35148900276
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Changes in resist glass transition temperatures due to exposure
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Fedynyshyn, T. H., Pottebaum, I., Cabral, A., Roberts, J., "Changes in resist glass transition temperatures due to exposure," Proc. of SPIE, 6519, 651917/1-651917/12 (2007).
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(2007)
Proc. of SPIE, 6519, 651917/1-651917/12
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Fedynyshyn, T.H.1
Pottebaum, I.2
Cabral, A.3
Roberts, J.4
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19
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50149087465
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Film Quantum Yields of EUV & Ultra-High PAG Photoresists
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Hassanein, E.; Higgins, C.; Naulleau, P.; Matyi, R.; Gallatin, G.; Denbeaux, G.; Antohe, A.; Thackeray, J.; Spear, K.; Szmanda, C.; Anderson, C. N.; Niakoula, D.; Malloy, M.; Khurshid, A.; Montgomery, C.; Piscani, E. C.; Rudack, A.; Byers, J.; Ma, A.; Dean, K.; Brainard, R.; "Film Quantum Yields of EUV & Ultra-High PAG Photoresists"; SPIE Proceedings, 6921 (2008).
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(2008)
SPIE Proceedings
, vol.6921
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Hassanein, E.1
Higgins, C.2
Naulleau, P.3
Matyi, R.4
Gallatin, G.5
Denbeaux, G.6
Antohe, A.7
Thackeray, J.8
Spear, K.9
Szmanda, C.10
Anderson, C.N.11
Niakoula, D.12
Malloy, M.13
Khurshid, A.14
Montgomery, C.15
Piscani, E.C.16
Rudack, A.17
Byers, J.18
Ma, A.19
Dean, K.20
Brainard, R.21
more..
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20
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0040707393
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Measuring acid generation efficiency in chemically amplified resists with all three beams
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Szmanda, C. R, Brainard, R. L., Mackevich, J. F., Awaji, A., Tanaka, T., Yamada, Y., Bohland, J., Tedesco, S., Dal'Zotto, B., Bruenger, W., Torkler, M., Fallmann, W., Loeschner, H., Kaesmaier, R., Nealey, P. M., Pawloski, A. R., "Measuring acid generation efficiency in chemically amplified resists with all three beams," Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures, 17(6), 3356-3361 (1999).
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Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures
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, Issue.6
, pp. 3356-3361
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Szmanda, C.R.1
Brainard, R.L.2
Mackevich, J.F.3
Awaji, A.4
Tanaka, T.5
Yamada, Y.6
Bohland, J.7
Tedesco, S.8
Dal'Zotto, B.9
Bruenger, W.10
Torkler, M.11
Fallmann, W.12
Loeschner, H.13
Kaesmaier, R.14
Nealey, P.M.15
Pawloski, A.R.16
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21
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35649002985
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Quantitative measurement of EUV resist outgassing
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Denbeaux, G.; Garg, R.; Waterman, J.; Mbanaso, C.; Netten, J.; Brainard, R.; Fan, Y.-J.; Yankulin, L.; Antohe, A.; DeMarco, K.; Jaffe, M.; Waldron, M.; Dean, K.; "Quantitative measurement of EUV resist outgassing"; SPIE Proceedings (2007), 6533, 653318/1-653318/5;
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SPIE Proceedings (2007), 6533, 653318/1-653318/5
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Denbeaux, G.1
Garg, R.2
Waterman, J.3
Mbanaso, C.4
Netten, J.5
Brainard, R.6
Fan, Y.-J.7
Yankulin, L.8
Antohe, A.9
DeMarco, K.10
Jaffe, M.11
Waldron, M.12
Dean, K.13
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22
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36148950198
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EUV resist outgassing : How much is too much?
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Dean, Kim R.; Denbeaux, Gregory; Wuest, Andrea; Garg, Rashi; "EUV resist outgassing : how much is too much?"; J. Photopoly. Sci. Tech. (2007), 20(3), 393-402.
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(2007)
J. Photopoly. Sci. Tech
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, pp. 393-402
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Dean, K.R.1
Denbeaux, G.2
Wuest, A.3
Garg, R.4
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23
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50149117696
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Contrast curve experiments were conducted during January 2008. Patrick Naulleau announced during the EUVI Resist workshop, SPIE 2/28, to bring exposures in line with recent calibration experiments, doses determined prior to 2/28 should be divided by 1.9.
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Contrast curve experiments were conducted during January 2008. Patrick Naulleau announced during the EUVI Resist workshop, SPIE 2/28, to bring exposures in line with recent calibration experiments, doses determined prior to 2/28 should be divided by 1.9.
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24
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0004932883
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CXRO website: http://henke.lbl.gov/optical_constantsT. Also see: Henke, B. L., Gullikson, E. M. and Davis, J. C., X-ray interactions: photoabsorption, scattering, transmission, and reflection at E=50-30000 eV, Z=1-92, Atomic Data and Nuclear Data Tables 54 (no.2), 181-342 (July 1993).
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CXRO website: http://henke.lbl.gov/optical_constantsT. Also see: Henke, B. L., Gullikson, E. M. and Davis, J. C., "X-ray interactions: photoabsorption, scattering, transmission, and reflection at E=50-30000 eV, Z=1-92," Atomic Data and Nuclear Data Tables Vol. 54 (no.2), 181-342 (July 1993).
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25
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3843087240
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Techniques for directly measuring the absorbance of photoresists at EUV wavelengths
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Chandhok, M., Cao, H., Wang, Y., Gullikson, E. M., Brainard, R. L., Robertson, S. A., "Techniques for directly measuring the absorbance of photoresists at EUV wavelengths," Proc. of SPIE, 5374, 861-868 (2004).
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Proc. of SPIE
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, pp. 861-868
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Chandhok, M.1
Cao, H.2
Wang, Y.3
Gullikson, E.M.4
Brainard, R.L.5
Robertson, S.A.6
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