Low activation energy fullerene molecular resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Manyam, J ^a   Manickam, M ^a   Preece, J A ^a   Palmer, R E ^a   Robinson, A P G ^a  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

Author keywords

Chemically amplified resist; Electron beam lithography; Fullerene; Molecular resist

Indexed keywords

ACID DIFFUSION; AIRBORNE CONTAMINANTS; AMBIENT CONDITIONS; CHEMICAL AMPLIFICATION; CHEMICALLY AMPLIFIED RESIST; ELECTRON BEAM RESIST; FEATURE RESOLUTION; FULLERENE DERIVATIVE; HIGH RESOLUTION; HIGH SENSITIVITY; LINEWIDTH ROUGHNESS; LOW-ACTIVATION ENERGY; MOLECULAR RESIST; MOLECULAR RESISTS; NEGATIVE TONES; NEXT GENERATION LITHOGRAPHY; POST EXPOSURE DELAY; POSTEXPOSURE BAKE; PROCESS LATITUDES; THREE COMPONENT;

AMPLIFICATION; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; FULLERENES; MATERIALS; PHOTORESISTORS; PHOTORESISTS; ROUGHNESS MEASUREMENT;

ACTIVATION ENERGY;

EID: 65849241590     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814088     Document Type: Conference Paper

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