Tungsten metal gate etching in Cl2 O2 inductively coupled high density plasmas

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 1875-1882

  Morel, T ^a,b   Bamola, S ^c   Ramos, R ^b   Beaurain, A ^b   Pargon, E ^b   Joubert, O ^b  

^a STMICROELECTRONICS   (France)

^b Joseph Fourier University   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FLUORINE; HAFNIUM; HAFNIUM COMPOUNDS; LOGIC GATES; PHOTOELECTRON SPECTROSCOPY; PLASMA DEPOSITION; PLASMA ETCHING; PLASMAS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TUNGSTEN;

BLANKET WAFERS; ETCH MECHANISMS; ETCH RATES; GATE STACKS; HIGH DENSITIES; METAL GATES; METAL LAYERS; PLASMA PARAMETERS; SIDE-WALLS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 57249111770     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3002392     Document Type: Article

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