SCOPUS 정보 검색 플랫폼

Volumn 44, Issue 4 B, 2005, Pages 2283-2287

Process integration issues on mo-metal-gated MOSFETs with HfO2 high-k gate dielectrics

Author keywords

Etching; Gate first; HfO2; High k gate dielectrics; Metal gate; Mo; MOSFET; Nitrogen diffusion

Indexed keywords

CHLORINE; DIELECTRIC MATERIALS; DIFFUSION; ETCHING; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; NITROGEN; OXYGEN;

GATE FIRST; HFO2; HIGH-K GATE DIELECTRICS; METAL GATES; NITROGEN DIFFUSION;

MOSFET DEVICES;

EID: 21244454831 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2283 Document Type: Conference Paper

Times cited : (2)

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