Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices

Journal of Non-Crystalline Solids

Volumn 303, Issue 1, 2002, Pages 40-49

  Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ELECTRONIC STRUCTURE; GATES (TRANSISTOR); MOLECULAR ORIENTATION; PERMITTIVITY; SEMICONDUCTING SILICON; TRANSITION METALS;

MOLECULAR ORBITALS;

DIELECTRIC MATERIALS;

EID: 0036567722     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(02)00962-6     Document Type: Article

References (27)