Influence of phase separation on electrical properties of ALD Hf-silicate films with various Si concentrations

Electrochemical and Solid-State Letters

Volumn 11, Issue 5, 2008, Pages

  Park, Tae Joo ^a   Kim, Jeong Hwan ^a   Jang, Jae Hyuck ^a   Na, Kwang Duk ^a   Hwang, Cheol Seong ^a,c   Yoo, Jeong Ho ^b  

^a Seoul National University   (South Korea)

^b Jusung Engineering Company Limited   (South Korea)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; PHASE SEPARATION; SILICON;

ALD HF-SILICATE FILMS; POSTDEPOSITION ANNEALING (PDA);

HAFNIUM COMPOUNDS;

EID: 40849116405     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2844717     Document Type: Article

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