Band alignment between (1 0 0)Si and Hf-based complex metal oxides

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 102-105

  Afanas'ev, V V ^a   Stesmans, A ^a   Zhao, C ^b   Caymax, M ^b   Rittersma, Z M ^c   Maes, J W ^d  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d ASMI   (Belgium)

Author keywords

Band offset; Bandgap width; Complex oxides; Photoemission

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; ENERGY GAP; HAFNIUM COMPOUNDS; PHOTOCONDUCTIVITY; PHOTOEMISSION; QUANTUM THEORY; SILICON COMPOUNDS;

BAND OFFSET; BANDGAP WIDTH; COMPLEX OXIDES; CONDUCTION BAND (CB);

MOS DEVICES;

EID: 19944365231     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.050     Document Type: Conference Paper

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