Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories

Solid-State Electronics

Volumn 51, Issue 11-12, 2007, Pages 1540-1546

  Molas, Gabriel ^a   Bocquet, Marc ^a   Buckley, Julien ^a   Grampeix, Helen ^a   Gély, Marc ^a   Colonna, Jean Philippe ^a   Licitra, Christophe ^a   Rochat, Névine ^a   Veyront, Thomas ^a   Garros, Xavier ^a   Martin, François ^a   Brianceau, Pierre ^a   Vidal, Vincent ^a   Bongiorno, Cosimo ^b   Lombardo, Salvatore ^b   Salvo, Barbara De ^a   Deleonibus, Simon ^a  

^a CEA LETI   (France)

^b CNR IMM   (Italy)

Author keywords

Hafnium aluminate; HfAlO; High k; Interpoly dielectrics; Non volatile memories; Poole Frenkel

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FLASH MEMORY; INSULATING MATERIALS; LEAKAGE CURRENTS;

HAFNIUM-ALUMINATE; HFALO; INTERPOLY DIELECTRICS; NON-VOLATILE MEMORIES; POOLE-FRENKEL;

HAFNIUM ALLOYS;

EID: 36248940243     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.020     Document Type: Article

References (18)

1. Alessandri M, Piagge R, Alberici S, Bellandi E, Caniatti M, Ghidini G. High-k materials in Flash memories. In: Proceedings of the 208th ECS Meeting; 2005.
2. Houdt J.V. High-k materials for nonvolatile memory applications. IRPS Tech Dig (2005) 234-239
3. Kim K. Technology for sub-50 nm DRAM and NAND Flash manufacturing. IEDM Tech Dig (2005) 333-336
4. Shin Y.S. Non-volatile memory technologies for beyond 2010. VLSI Circuit Tech Dig (2005) 156-159
5. Lai C.H., Chin A., Chiang K.C., Yoo W.J., Cheng C.F., McAlister S.P., et al. Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large DVth and good retention. VLSI Tech Dig (2005) 210-211
6. Wang Y.Q., Singh P.K., Yoo W.J., Yeo Y.C., Samudra G., Chin A., et al. Long retention and low voltage operation using IrO2/HfAlO/HfSiO/HfAlO gate stack for memory application. IEDM Tech Dig (2005) 169-172
7. Tan Y.N., Chim W.K., Choi W.K., Joo M.S., and Cho B.J. Hafnium aluminium oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation. IEEE Trans Electron Dev 53 4 (2006) 654-662
8. Andrieu F., Faynot O., Garros X., Lafond D., Buj C., Tosti L., et al. Comparative scalability of PVD and CVD TiN on HfO2 as a metal gate stack for FDSOI cMOSFETs down to 25 nm gate length and width. IEDM Tech Dig (2006) 641-644
9. Zhu W.J., Tamagawa T., Gibson M., Furukawa T., and Ma T.P. Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics. IEEE Electron Dev Lett 23 11 (2002) 649-651
10. Boher P., Evrard P., Condat O., Dos Reis C., Defranoux C., Piel J.Ph., et al. Automated metrology system including VUV spectroscopic ellipsometry and X-ray reflectometry for 300 mm silicon microelectronics. Thin Solid Film 455-456 (2004) 798-803
11. Nguyen N.V., Sayan S., Levin I., Ehrstein J.R., Baumvol I.J.R., Driemeier C., et al. Optical band gaps and composition dependence of hafnium-aluminate thin films grown by atomic layer chemical vapor deposition. J Vac Sci Technol A 23 (2005) 1706-1713
12. 1-x on (1 0 0) Si. Appl Phys Lett 81 2 (2002) 376-378
13. Bocquet M, Molas G, Grampeix H, Buckley J, Martin F, Colonna JP. Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers. In: Proceedings of ICMTD, Giens (France); 2007. p. 239-42.
14. Deleruyelle D, De Salvo B, Gely M, Vidal V, Garros X, Buffet N. Study of new high-k stacks in view of application as interpoly dielectrics for deep sub-micron FLASH technologies. In: Proceedings of Wodim, Cork (Irland); 2004. p. 73-4.
15. Li Q., Koo K.M., Lau W.M., Lee P.F., Dai J.Y., Hou Z.F., et al. Effects of Al addition on the native defects in hafnia. Appl Phys Lett 88 (2006) 182903
16. Johnson R.S., Hong J.G., Hinkle C., and Lucovsky G. Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications. J Vac Sci Technol B 20 3 (2002) 1126-1131
17. Leroux C., Mitard J., Ghibaudo G., Garros X., Reimbold G., Guillaumot B., et al. Characterization and modeling of hysteresis phenomena in High-k dielectrics. IEDM Tech Dig (2004) 737-740
18. 2 as charge traps in high-k stacks. Appl Phys Lett 89 (2006) 082908