Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si

Applied Physics Letters

Volumn 82, Issue 15, 2003, Pages 2419-2421

  Lee, P F ^a   Dai, J Y ^a   Wong, K H ^a   Chan, H L W ^a   Choy, C L ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ENERGY DISPERSIVE SPECTROSCOPY; FILM GROWTH; INTERFACES (MATERIALS); PULSED LASER DEPOSITION; SILICON; SURFACE REACTIONS; TRANSMISSION ELECTRON MICROSCOPY;

GATE BIAS;

DIELECTRIC FILMS;

EID: 0037651096     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1566796     Document Type: Article

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