Inherent paramagnetic defects in layered Si/ SiO2 superstructures with Si nanocrystals

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Jivanescu, M ^a   Stesmans, A ^a   Zacharias, M ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTROSLAG REMELTING; INTERFACES (COMPUTER); IRRADIATION; LEAD; LEAD ALLOYS; LIGHT EMISSION; LUMINESCENCE; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; PARAMAGNETIC MATERIALS; PHOTOEXCITATION; POINT DEFECTS; SILICON; SINGLE CRYSTALS; SPIN DYNAMICS; STANDARDS;

AMORPHOUS SIO2; COMPUTER SPECTRUMS; CRYSTALLINE SYSTEMS; D LINES; ELECTRON SPIN RESONANCES; HIGH QUALITIES; INTERFACE DEFECTS; INTRINSIC DEFECTS; INTRINSIC POINT DEFECTS; OPTICAL EXCITATIONS; OPTICAL IRRADIATIONS; PARAMAGNETIC DEFECTS; PL MEASUREMENTS; POWDER PATTERNS; REGULAR PATTERNS; SECOND HARMONICS; SENSITIVE PROPERTIES; SI DANGLING BONDS; SI NANO PARTICLES; SI NANOCRYSTALLITES; SI NANOCRYSTALS; STRAIN RELAXING; SUB SYSTEMS; UV IRRADIATIONS; WITH OR WITHOUT;

DEFECTS;

EID: 57049128738     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2966690     Document Type: Article

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