Influence of thermal annealing on the memory effect in MIS structures containing crystalline Si nanoparticles

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 1, 2007, Pages 182-185

  Nedev, N ^b   Nesheva, D ^a   Manolov, E ^a   Bruggemann R ^c   Meier, S ^c   Kirilov, K ^d   Levi, Z ^a  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b UNIVERSIDAD AUTÓNOMA DE BAJA CALIFORNIA   (Mexico)

^c UNIVERSITY OF OLDENBURG   (Germany)

^d UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

High frequency C V dependencies; Memory devices; Nanocrystals

Indexed keywords

DATA STORAGE EQUIPMENT; HYSTERESIS; NANOCRYSTALS; SILICA; SILICON OXIDES; SILICON WAFERS;

ANNEALED SAMPLES; CRYSTALLINE SI; FIXED OXIDE CHARGES; HIGH-FREQUENCY C-V; N2 ATMOSPHERES; SCANNING RANGE; SILICON NANOCRYSTALS; THERMAL-ANNEALING;

ANNEALING;

EID: 38749104228     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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