Influence of dispersive exciton motion on the recombination dynamics in porous silicon

Journal of Applied Physics

Volumn 80, Issue 1, 1996, Pages 216-225

  Pavesi, Lorenzo ^a  

^a UNIVERSITY OF TRENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343002712     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362807     Document Type: Article

References (31)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. L. Pavesi and M. Ceschini, Phys. Rev. B 48, 17625 (1993).
3. H. E. Roman and L. Pavesi (unpublished).
4. Y. Kanemitsu, Phys. Rev. B 48, 12357 (1993).
5. N. Ookubo and S. Sawada, Phys. Rev. B 51, 17526 (1995).
6. T. Suemoto, K. Tanaka, and A. Nakajima, Phys. Rev. B 49, 11005 (1994).
7. See, e.g., A. G. Cullis and L. T. Canham, Nature 353, 335 (1991).
8. T. K. Sham et al., Nature 363, 331 (1993).
9. P. D. J. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, J. Phys. Condensed Matt. 5, L91 (1993); P. D. J. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, J. Luminescence 57, 257 (1993).
10. P. D. J. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, J. Phys. Condensed Matt. 5, L91 (1993); P. D. J. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, J. Luminescence 57, 257 (1993).
11. J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestrain, and R. M. Macfarlane, Phys. Rev. B 45, 14171 (1992); J. C. Vial, A. Bsiesy, G. Fishman, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, in Microcrystalline Semiconductors: Materials Science and Devices, edited by Y. Aoyagi, L. T. Canham, P. M. Fauchet, I. Shimizu, and C. C. Tsu, Mater. Res. Symp. Proc. (1993), Vol. 283, p. 241.
12. J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestrain, and R. M. Macfarlane, Phys. Rev. B 45, 14171 (1992); J. C. Vial, A. Bsiesy, G. Fishman, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, in Microcrystalline Semiconductors: Materials Science and Devices, edited by Y. Aoyagi, L. T. Canham, P. M. Fauchet, I. Shimizu, and C. C. Tsu, Mater. Res. Symp. Proc. (1993), Vol. 283, p. 241.
13. M. S. Hybertsen, Phys. Rev. Lett. 75, 1514 (1994).
14. G. Pfister and H. Scher, Adv. Phys. 27, 747 (1978).
15. J. Klafter and M. F. Shlesinger, Proc. Natl. Acad. Sci. USA 83, 848 (1986).
16. H. Scher, M. F. Shlesinger, and J. T. Bendler, Phys. Today 44, 26 (1991).
17. L. Pavesi, M. Ceschini, G. Mariotto, E. Zanghellini, O. Bisi, M. Anderle, L. Calliari, M. Fedrizzi, and L. Fedrizzi, J. Appl. Phys. 75, 1118 (1994).
18. F. Koch, Mater. Res. Symp. Proc. 298, 319 (1993); F. Koch, V. PetrovaKoch, and T. Muschik, J. Luminescence 57, 271 (1993).
19. F. Koch, Mater. Res. Symp. Proc. 298, 319 (1993); F. Koch, V. PetrovaKoch, and T. Muschik, J. Luminescence 57, 271 (1993).
20. M. Stutzmann, M. S. Brandt, M. Rosenbauer, J. Weber, and H. D. Fuchs, Phys. Rev. B 47, 4806 (1993).
21. L. Pavesi, M. Ceschini, and F. Rossi, J. Luminescence 57, 131 (1993).
22. M. Voos, C. Delalande, M. Ben Dahan, J. Wanistain, A. N. Tikov, and A. Halimaoui, Solid State Commun. 94, 651 (1995).
23. N. M. Haegel and L. Wang, in Porous Silicon, edited by Zhe Chuan Feng and R. Tsu (World Scientific, New York, 1995), p. 219.
24. E. Bustarret, M. Ligeon, I. Mihalcescu, and J. Oswald, Thin Solid Films 255, 234 (1995).
25. L. Wang, M. T. Wilson, and N. M. Haegel, Appl. Phys. Lett. 62, 1113 (1993).
26. S. Finkbeiner and J. Weber, Thin Solid Films 255, 254 (1995).
27. S. V. Gaponeko, I. N. Germanenko, E. P. Petrov, A. P. Stupak, V. P. Bondarenko, and A. M. Dorofeev, Appl. Phys. Lett. 64, 85 (1994).
28. E. Bustarret, I. Mihalcescu, M. Ligeon, R. Romestain, J. C. Vial, and F. Madeore, J. Luminescence 57, 105 (1993).
29. N. Ookubo, N. Hamada, and S. Sawada, Solid State Commun. 92, 369 (1994).
30. I. Mihalcescu, M. Ligeon, F. Muller, R. Romestrain, and J. C. Vial, J. Luminescence 57, 111 (1995).
31. C. Tsang and R. A. Street, Phys. Rev. B 19, 3027 (1979).