Effect of ion-irradiation and annealing on the luminescence of Si nanocrystals in SiO2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 166, Issue , 2000, Pages 851-856

  Cheylan, S ^a   Langford, N ^a   Elliman, R G ^a  

^a Res Sch P   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); ION BOMBARDMENT; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POINT DEFECTS; RADIATION DAMAGE; SILICON; THERMAL EFFECTS;

NANOCRYSTAL EMISSION;

SILICA;

EID: 0033738629     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00795-8     Document Type: Article

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