GISAXS study of Si nanocrystals formation in SiO2 thin films

Thin Solid Films

Volumn 515, Issue 2 SPEC. ISS., 2006, Pages 756-758

  Pivac, B ^a   Kovacevic I ^a   Dubcek P ^a   Radic N ^a   Bernstorff, S ^b  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b SINCROTRONE TRIESTE   (Italy)

Author keywords

Si nanostructures; SiO SiO2 amorphous superlattice; Small angle X ray scattering

Indexed keywords

AMORPHOUS MATERIALS; EVAPORATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR SUPERLATTICES; SILICA; SINGLE CRYSTALS; VACUUM APPLICATIONS; X RAY SCATTERING;

GRAZING INCIDENCE SMALL-ANGLE X-RAY SCATTERING (GISAXS); HIGH VACUUM EVAPORATION; SI NANOSTRUCTURES; SIO/SIO2 AMORPHOUS SUPERLATTICES;

THIN FILMS;

EID: 33748755266     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.192     Document Type: Article

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