Electrical properties of nominally undoped silicon nanowires grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Bauer, Jan ^a   Fleischer, Frank ^a   Breitenstein, Otwin ^a   Schubert, Luise ^a   Werner, Peter ^a   Gösele, Ulrich ^a   Zacharias, Margit ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON BEAMS; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON;

HOPPING CONDUCTIVITY; NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 33846041672     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2428402     Document Type: Article

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