Evolution of SiO2 matrix during the formation of Ge and Si nanocrystals by ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 239, Issue 4, 2005, Pages 419-425

  Serincan, U ^a   Yerci, S ^a   Kulakci, M ^a   Turan, R ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

FTIR; Ge; Nanocrystal; Si; SiO2

Indexed keywords

CRYSTAL STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; REACTION KINETICS;

NANOCRYSTAL; PHOTOLUMINESCENCE MEASUREMENTS; SI ATOMS; STRUCTURAL VARIATIONS;

SILICA;

EID: 25644444573     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.120     Document Type: Article

References (32)

1. P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, G. Ben Assayag, N. Cherkashin, A. Claverie, J.A. Van Den Berg, V. Soncini, A. Agarwal, M. Ameen, M. Perego, and M. Fanciulli Nucl. Instr. and Meth. B 216 2004 228
2. B. Garrido, M. López, A. Pérez-Rodríguez, C. García, P. Pellegrino, R. Ferré, J.A. Moreno, J.R. Morante, C. Bonafos, M. Carrada, A. Claverie, J. de la Torre, and A. Souifi Nucl. Instr. and Meth. B 216 2004 213
3. M. Kanoun, M. Lemiti, G. Bremond, A. Souifi, F. Bassani, and I. Berbezier Superlattices Microstruct. 36 2004 143
4. S. Kim, S.-H. Choi, C.J. Park, H.Y. Cho, and R.G. Elliman J. Korean Phys. Soc. 45 2004 501
5. J. de La Torre, A. Souifi, A. Poncet, C. Busseret, M. Lemiti, G. Bremond, G. Guillot, O. Gonzalez, B. Garrido, J.R. Morante, and C. Bonafos Physica E 16 2003 326
6. G.-R. Lin J. Appl. Phys. 94 2003 7542
7. Z. Pei, and H.L. Hwang Appl. Surf. Sci. 212 2003 760
8. W. Skorupa, L. Rebohle, and T. Gebel Appl. Phys. A 76 2003 1049
9. E. Borsella, C. de Julián Fernández, M.A. García, G. Mattei, C. Maurizio, P. Mazzoldi, S. Padovani, C. Sada, G. Battaglin, E. Cattaruzza, F. Gonella, A. Quaranta, F. D'Acapito, M.A. Tagliente, and L. Tapfer Nucl. Instr. and Meth. B 191 2002 447
10. G. Franzò, A. Irrera, E.C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P.G. Fallica, and F. Priolo Appl. Phys. A 74 2002 1
11. T. Matsuda, M. Kawabe, H. Iwata, and T. Ohzone IEICE Trans. Electron. 85 2002 1895
12. J. von Borany, T. Gebel, K.-H. Stegemann, H.-J. Thees, and M. Wittmaack Solid State Electron. 46 2002 1729
13. H.-J. Thees, M. Wittmaack, K.-H. Stegemann, J.v. Borany, K.-H. Heinig, and T. Gebel Microelectron. Reliab. 40 2000 867
14. C.W. White, A. Meldrum, J.D. Budai, S.P. Withrow, E. Sonder, R.A. Zuhr, D.M. Hembree Jr., M. Wu, and D.O. Henderson Nucl. Instr. and Meth. B 148 1999 991
15. I.E. Tyschenko, V.A. Volodin, L. Rebohle, M. Voelskov, and V. Skorupa Semiconductors 33 1999 523
16. C.L. Heng, Y.J. Liuc, A.T.S. Wee, and T.G. Finstad J. Cryst. Growth 262 2004 95
17. I.E. Tyschenko, A.B. Talochkin, A.G. Cherkov, K.S. Zhuravlev, and R.A. Yankov Solid State Commun. 129 2004 63
18. E.S. Marstein, A. Gunnæs, U. Serincan, S. Jørgensen, A. Olsen, R. Turan, and T.G. Finstad Nucl. Instr. and Meth. B 207 2003 424
19. E.S. Marstein, A.E. Gunnæs, U. Serincan, R. Turan, A. Olsen, and T.G. Finstad Surf. Coat. Technol. 158 2002 544
20. F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo J. Appl. Phys. 95 2004 3723
21. J. Heitmann, F. Müller, L. Yi, M. Zacharias, D. Kovalev, and F. Eichhorn Phys. Rev. B 69 2004 195309
22. J.S. Biteen, N.S. Lewis, H.A. Atwater, and A. Polman Appl. Phys. Lett. 84 2004 5389
23. U.S. Sias, E.C. Moreira, E. Ribeiro, H. Boudinov, L. Amaral, and M. Behar Nucl. Instr. and Meth. B 218 2004 405
24. SRIM: The Stopping and Range of Ions in Matter, Program Manual, J.F. Ziegler, 1996.
25. U. Serincan, G. Kartopu, A. Guennes, T.G. Finstad, R. Turan, Y. Ekinci, and S.C. Bayliss Semicond. Sci. Technol. 19 2004 247
26. J.Y. Jeong, S. Im, M.S. Oh, H.B. Kim, K.H. Chae, C.N. Whang, and J.H. Song J. Lumin. 80 1999 285
27. U. Serincan, G. Aygun, and R. Turan J. Lumin. 113 2005 229
28. M. Modreanu, M. Gartner, E. Aperathitis, N. Tomozeiu, M. Androulidaki, D. Cristea, and P. Hurley Physica E 16 2003 461
29. M. Yamamoto, T. Koshikawa, T. Yasue, H. Harima, and K. Kajiyama Thin Solid Films 369 2000 100
30. R. Turan, and T.G. Finstand Semicond. Sci. Technol. 7 1992 75
31. S. Margalit, A. Bar-lev, A.B. Kuper, H. Aharoni, and A. Neugroschel J. Cryst. Growth 17 1972 288
32. Y. Liu, T.P. Chen, Y.Q. Fu, M.S. Tse, J.H. Hsieh, P.F. Ho, and Y.C. Liu J. Phys. D: Appl. Phys. 36 2003 L97