Schottky-Barrier source/drain MOSFETs on ultrathin SOI body with a tungsten metallic midgap gate

IEEE Electron Device Letters

Volumn 25, Issue 12, 2004, Pages 801-803

  Larrieu, Guilhem ^a   Dubois, Emmanuel ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Metal gate; Schottky barrier (SB) MOSFET; Silicon on insulator (SOI)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENCAPSULATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICA; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS; THRESHOLD VOLTAGE; TUNGSTEN;

GATE ENCAPSULATION; LONG CHANNEL DEVICES; METAL GATE; METALLIC MIDGAP GATE; SCHOTTKY BARRIER (SB) MOSFET;

MOSFET DEVICES;

EID: 10844225390     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.838053     Document Type: Article

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