Use of ErSi2 in source/drain contacts of ultra-thin SOI MOSFETs

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 378-381

  Huda, M Q ^a   Sakamoto, K ^b  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Contact; Erbium; MOSFET; Resistivity; Silicide; SOI

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ERBIUM COMPOUNDS; METALLIZING; OHMIC CONTACTS; SILICON ON INSULATOR TECHNOLOGY; ULTRAHIGH VACUUM;

SILICIDE LAYERS;

MOSFET DEVICES;

EID: 0037074804     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00834-0     Document Type: Conference Paper

References (13)