Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 91, Issue 2, 2002, Pages 757-759

  Calvet, L E ^a,b,c,d   Luebben, H ^a,b,c,d   Reed, M A ^a,b,c,d   Wang, C ^b,c,d   Snyder, J P ^c,d   Tucker, J R ^d  

^a Yale University   (United States)

^b Applied Imaging Corporation   (United States)

^c Spinnaker Semiconductor   (United States)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; DEVICE-SCALING; LEAKAGE PATHS; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; ON/OFF RATIO; PROCESS VARIATION; SCHOTTKY BARRIERS; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SUB-THRESHOLD BEHAVIOR; SUBTHRESHOLD SWING;

MOSFET DEVICES;

SCHOTTKY BARRIER DIODES;

EID: 0037967604     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1425074     Document Type: Article

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