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Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 61-66

Nanometer scale characterisation of CoSi2 and NiSi induced strain in Si by convergent beam electron diffraction

(5) Benedetti, A a Bender, H a Torregiani, C a,b Van Dal, M c Maex, K a,b

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

c PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

Convergent beam electron diffraction; Strain; Suicides

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON DIFFRACTION; FINITE ELEMENT METHOD; LATTICE CONSTANTS; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; NICKEL COMPOUNDS; SILICON; STRAIN; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); FIELD EMISSION GUN (FEG); GRAIN ORIENTATION; MECHANICAL GRINDING; SILICIDES;

COBALT COMPOUNDS;

EID: 10644257371 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2004.07.035 Document Type: Conference Paper

Times cited : (16)

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