High-speed Schottky-barrier pMOSFET with fT = 280 GHz

IEEE Electron Device Letters

Volumn 25, Issue 4, 2004, Pages 220-222

  Fritze, M ^a   Chen, C L ^a   Calawa, S ^a   Yost, D ^a   Wheeler, B ^a   Wyatt, P ^a   Keast, C L ^a   Snyder, J ^b   Larson, J ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b Spinnaker Semiconductor   (United States)

Author keywords

Microwave MOSFET; Schottky barrier MOSFET; Short channel MOSFET

Indexed keywords

ELECTRIC CURRENTS; LEAKAGE CURRENTS; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

DRAIN JUNCTIONS; HIGH PERFORMANCE RADIO FREQUENCY; SCHOTTKY BARRIER CONTACTS; SHORT CHANNEL MOSFET;

MOSFET DEVICES;

EID: 1942455769     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.826294     Document Type: Letter

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