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Volumn 25, Issue 4, 2004, Pages 220-222

High-speed Schottky-barrier pMOSFET with fT = 280 GHz

Author keywords

Microwave MOSFET; Schottky barrier MOSFET; Short channel MOSFET

Indexed keywords

ELECTRIC CURRENTS; LEAKAGE CURRENTS; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

EID: 1942455769     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.826294     Document Type: Letter
Times cited : (106)

References (12)
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    • Taur, Y.1
  • 2
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    • International Technology Roadmap for Semiconductors
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  • 3
    • 51149208592 scopus 로고
    • Experimental investigation of a PtSi source and drain field emission transistor
    • J. P. Snyder, C. R. Helms, and Y. Nishi, "Experimental investigation of a PtSi source and drain field emission transistor," Appl. Phys. Lett., vol. 46, pp. 1420-1422, 1995.
    • (1995) Appl. Phys. Lett. , vol.46 , pp. 1420-1422
    • Snyder, J.P.1    Helms, C.R.2    Nishi, Y.3
  • 4
    • 0033593712 scopus 로고    scopus 로고
    • Sub-40-nm PtSi Schottky source-drain MOSFETs
    • C. Wang, J. P. Snyder, and J. R. Tucker, "Sub-40-nm PtSi Schottky source-drain MOSFETs," Appl. Phys. Lett., vol. 74, pp. 1174-1176, 1999.
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 1174-1176
    • Wang, C.1    Snyder, J.P.2    Tucker, J.R.3
  • 10
    • 0042062210 scopus 로고    scopus 로고
    • RF MOSFET: Recent advances, current status and future trends
    • J. J. Liou and F. Schwierz, "RF MOSFET: recent advances, current status and future trends," Solid State Electron., vol. 47, pp. 1881-1895, 2003.
    • (2003) Solid State Electron. , vol.47 , pp. 1881-1895
    • Liou, J.J.1    Schwierz, F.2
  • 12
    • 0036867952 scopus 로고    scopus 로고
    • A computational study of thin-body, double-gate Schottky-barrier MOSFETs
    • Nov.
    • J. Guo and M. S. Lundstrum, "A computational study of thin-body, double-gate Schottky-barrier MOSFETs," IEEE Trans. Electron Devices, vol. 49, pp. 1897-1901, Nov. 2002.
    • (2002) IEEE Trans. Electron Devices , vol.49 , pp. 1897-1901
    • Guo, J.1    Lundstrum, M.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.