-
1
-
-
0036508201
-
CMOS design near the limit of scaling
-
Mar./May
-
Y. Taur, "CMOS design near the limit of scaling," IBM J. Res. Develop., vol. 46, pp. 213-222, Mar./May 2002.
-
(2002)
IBM J. Res. Develop.
, vol.46
, pp. 213-222
-
-
Taur, Y.1
-
2
-
-
1942518639
-
-
International Technology Roadmap for Semiconductors
-
International Technology Roadmap for Semiconductors. Online. Available: http://public.itrs.net/Files/2003ITRS/Home2003.htm
-
-
-
-
3
-
-
51149208592
-
Experimental investigation of a PtSi source and drain field emission transistor
-
J. P. Snyder, C. R. Helms, and Y. Nishi, "Experimental investigation of a PtSi source and drain field emission transistor," Appl. Phys. Lett., vol. 46, pp. 1420-1422, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.46
, pp. 1420-1422
-
-
Snyder, J.P.1
Helms, C.R.2
Nishi, Y.3
-
4
-
-
0033593712
-
Sub-40-nm PtSi Schottky source-drain MOSFETs
-
C. Wang, J. P. Snyder, and J. R. Tucker, "Sub-40-nm PtSi Schottky source-drain MOSFETs," Appl. Phys. Lett., vol. 74, pp. 1174-1176, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1174-1176
-
-
Wang, C.1
Snyder, J.P.2
Tucker, J.R.3
-
5
-
-
0034453418
-
Complementary silicide source/drain thin body MOSFETs for the 20-nm gate length regime
-
J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T. J. King, and C. Hu, "Complementary silicide source/drain thin body MOSFETs for the 20-nm gate length regime," in IEDM Tech. Dig., 2000, pp. 57-60.
-
IEDM Tech. Dig., 2000
, pp. 57-60
-
-
Kedzierski, J.1
Xuan, P.2
Anderson, E.H.3
Bokor, J.4
King, T.J.5
Hu, C.6
-
6
-
-
0141722432
-
Limits of strong phase shift patterning for device research
-
M. Fritze, R. Mallen, B. Wheeler, D. Yost, J. P. Snyder, B. Kasprowicz, B. Eynon, and H. Y. Liu, "Limits of strong phase shift patterning for device research," Proc. SPIE, vol. 5040, pp. 327-343, 2003.
-
(2003)
Proc. SPIE
, vol.5040
, pp. 327-343
-
-
Fritze, M.1
Mallen, R.2
Wheeler, B.3
Yost, D.4
Snyder, J.P.5
Kasprowicz, B.6
Eynon, B.7
Liu, H.Y.8
-
7
-
-
0034790452
-
T for RF applications
-
T for RF applications," in Symp. VLSI Tech. Dig., 2001, pp. 89-90.
-
Symp. VLSI Tech. Dig., 2001
, pp. 89-90
-
-
Chang, C.-Y.1
Su, J.G.2
Hsu, H.M.3
Wong, S.C.4
Huang, T.Y.5
Sun, Y.C.6
-
8
-
-
0038236509
-
CMOS technology for MS/RF SoC
-
Feb.
-
C. H. Diaz, D. D. Tang, and J. Sun, "CMOS technology for MS/RF SoC," IEEE Trans. Electron Devices, vol. 50, pp. 557-566, Feb. 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, pp. 557-566
-
-
Diaz, C.H.1
Tang, D.D.2
Sun, J.3
-
9
-
-
0038236498
-
Gate-source-drain architecture impact on DC and RF performance of sub-100-nm elevated source/drain nMOS transistors
-
Feb.
-
W. Jeamsaksiri, M. Jurczak, L. Grau, D. Linten, E. Augendre, M. De Potter, R. Rooyackers, P. Wambacq, and G. Badenes, "Gate-source-drain architecture impact on DC and RF performance of sub-100-nm elevated source/drain nMOS transistors," IEEE Trans. Electron Devices, vol. 50, pp. 610-617, Feb. 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, pp. 610-617
-
-
Jeamsaksiri, W.1
Jurczak, M.2
Grau, L.3
Linten, D.4
Augendre, E.M.5
De Potter6
Rooyackers, R.7
Wambacq, P.8
Badenes, G.9
-
10
-
-
0042062210
-
RF MOSFET: Recent advances, current status and future trends
-
J. J. Liou and F. Schwierz, "RF MOSFET: recent advances, current status and future trends," Solid State Electron., vol. 47, pp. 1881-1895, 2003.
-
(2003)
Solid State Electron.
, vol.47
, pp. 1881-1895
-
-
Liou, J.J.1
Schwierz, F.2
-
11
-
-
0035367153
-
-
Aug.
-
H. Momose, E. Morifuji, T. Yoshitomi, T. Ohguro, M. Saito, and H. Iwai, IEEE Trans. Electron Devices, vol. 48, pp. 1165-1174, Aug. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, pp. 1165-1174
-
-
Momose, H.1
Morifuji, E.2
Yoshitomi, T.3
Ohguro, T.4
Saito, M.5
Iwai, H.6
-
12
-
-
0036867952
-
A computational study of thin-body, double-gate Schottky-barrier MOSFETs
-
Nov.
-
J. Guo and M. S. Lundstrum, "A computational study of thin-body, double-gate Schottky-barrier MOSFETs," IEEE Trans. Electron Devices, vol. 49, pp. 1897-1901, Nov. 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 1897-1901
-
-
Guo, J.1
Lundstrum, M.S.2
|