Ballistic electron emission microscopy studies of Au/Molecule/n-GaAs diodes

Journal of Physical Chemistry B

Volumn 109, Issue 13, 2005, Pages 6252-6256

  Li, Wenjie ^a   Kavanagh, Karen L ^a   Matzke, Carolyn M ^b   Talin, A Alec ^c   Léonard, François ^c   Faleev, Sergey ^c   Hsu, Julia W P ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GRANULAR STRUCTURE; MOLECULAR LAYERS; THERMIONIC EMISSION THEORY; TUNNELING CURRENT;

ELECTRON MICROSCOPY; ELECTRON TRANSITIONS; ELECTRON TUNNELING; FERMI LEVEL; OSCILLATIONS; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTOR DIODES;

EID: 17044423009     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0501648     Document Type: Article

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