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Volumn 81, Issue 26, 2002, Pages 4967-4969

Impact of organic contamination on the electrical properties of hydrogen-terminated silicon under ambient conditions

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; HYDROGEN; INFRARED SPECTROSCOPY; ORGANIC SOLVENTS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SURFACE PROPERTIES;

EID: 0037164803     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1532758     Document Type: Article
Times cited : (22)

References (23)
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    • note
    • The contact angles provided here are thermodynamic equilibrated contact angles, which were determined on an AST Optima contact angle system at ambient conditions.
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    • note
    • An alternative approach to understand the J-V transition is to consider the barrier width, which should increase with the amount of adsorbed organic contaminates on the surface.
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    • note
    • 3) were mounted in a purged chamber with the light focused normal to one of the 45 bevels. Background spectra were obtained using a freshly oxidized silicon surface.
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