A tunnel current in self-assembled monolayers of 3- Mercaptopropyltrimethoxysilane

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Volumn 1, Issue 7, 2005, Pages 725-729

  Aswal, Dinesh K ^a,b   Lenfant, Stephane ^a   Guerin, David ^a   Yakhmi, Jutinder V ^b   Vuillaume, Dominique ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b BHABHA ATOMIC RESEARCH CENTRE   (India)

Author keywords

Gold; Molecular electronics; Self assembled monolayers; Silicon materials; Tunneling

Indexed keywords

CHEMICAL BONDS; DIFFUSION; ELECTRON TUNNELING; GOLD; SELF ASSEMBLY; X RAY PHOTOELECTRON SPECTROSCOPY;

MOLECULAR ELECTRONICS; SILICON MATERIALS; TUNNELING;

SILANES;

(3 MERCAPTOPROPYL)TRIMETHOXYSILANE; (3-MERCAPTOPROPYL)TRIMETHOXYSILANE; CARBON; GOLD; SILANE DERIVATIVE; SILICON;

ADSORPTION; ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; ELECTROCHEMISTRY; ELECTRODE; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; PHOTOCHEMISTRY; SURFACE PROPERTY; TEMPERATURE;

ADSORPTION; CARBON; ELECTROCHEMISTRY; ELECTRODES; GOLD; MICROSCOPY, ATOMIC FORCE; MODELS, CHEMICAL; MOLECULAR STRUCTURE; NANOTECHNOLOGY; PHOTOCHEMISTRY; SILANES; SILICON; SURFACE PROPERTIES; TEMPERATURE;

EID: 27944436296     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200500052     Document Type: Article

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