Thiol-terminated monolayers on oxide-free Si: Assembly of semiconductor-alkyl-S-metal junctions

Langmuir

Volumn 23, Issue 6, 2007, Pages 3236-3241

  Böcking, Till ^a   Salomon, Adi ^b   Cahen, David ^b   Gooding, J Justin ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CHEMICAL BONDS; HYDROSILYLATION; SEMICONDUCTOR JUNCTIONS; SILICON; THERMIONIC EMISSION; THERMOANALYSIS;

CURRENT TRANSPORT; INTERFACIAL BONDS; ORGANIC MONOLAYERS;

SELF ASSEMBLED MONOLAYERS;

GOLD; METAL; OXIDE; SILICON; SULFUR; THIOL DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; ELECTROCHEMISTRY; ELECTRODE; ELECTRONICS; METHODOLOGY; PHYSICAL CHEMISTRY; SEMICONDUCTOR; SURFACE PROPERTY; TEMPERATURE; X RAY;

CHEMISTRY, PHYSICAL; ELECTROCHEMISTRY; ELECTRODES; ELECTRONICS; GOLD; METALS; MODELS, CHEMICAL; OXIDES; SEMICONDUCTORS; SILICON; SULFHYDRYL COMPOUNDS; SULFUR; SURFACE PROPERTIES; TEMPERATURE; X-RAYS;

EID: 33947364004     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la063034e     Document Type: Article

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