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Volumn 109, Issue 46, 2005, Pages 21836-21841

Electrical and spectroscopic characterization of metal/monolayer/Si devices

Author keywords

[No Author keywords available]

Indexed keywords

ALKANE MONOLAYERS; SUBSTRATE BONDING;

EID: 28944442035     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp053561r     Document Type: Article
Times cited : (58)

References (41)
  • 14
    • 28944436950 scopus 로고    scopus 로고
    • note
    • Film thickness was determined from SE and a three-phase (air, OA, Si) model, assuming an index of 1.5 for the alkoxy monolayer.
  • 15
    • 28944433943 scopus 로고    scopus 로고
    • note
    • Thicknesses are nominal, based on a quartz crystal micro balance monitor.
  • 16
    • 28944436266 scopus 로고    scopus 로고
    • note
    • Ti only capacitors (∼80 nm thick Ti) were fabricated for electrical characterization. Because of the poor IR reflectivity of Ti, blanket films consisting of a Ti:Au (9 nm/200 nm) stack were used for the pb-RAIRS measurements. Electrical measurements on Ti:Au capacitors were problematic due to poor registry of the two metal depositions due to the use of a shadow mask.
  • 27
    • 28944450740 scopus 로고    scopus 로고
    • note
    • The input face oxide film was not included as it is removed by the reference spectrum.
  • 30
    • 28944445075 scopus 로고    scopus 로고
    • note
    • The experimental measurement uncertainty for an IV measurement for any given capacitor structure is very small (less than the width of the line in Figures 2 and 3). The device - device variability is moderate (disregarding the occasional device outliers), and the IV curves shown are representative of the majority of the measured devices. For Au - metal devices (where we have the most measurements and fabrication runs), the fabrication-run - fabrication-run variability is comparable to the dot - dot variability within a given fabrication run.
  • 33


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.