Role of interfaces on the direct tunneling and the inelastic tunneling behaviors through metal/alkylsilane/silicon junctions

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 6, 2006, Pages 1464-1469

  Aswal, D K ^a,b   Petit, C ^c   Salace, G ^d   Guerin D ^a   Lenfant, S ^a   Yakhmi, J V ^b   Vuillaume, D ^a  

^a CNRS   (France)

^b BHABHA ATOMIC RESEARCH CENTRE   (India)

^c UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^d UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALKYLSILANE; BARRIER HEIGHT; INELASTIC ELECTRON TUNNELING SPECTROSCOPY (IETS); SIMMONS EQUATION;

ELECTRODES; GOLD; INTERFACES (MATERIALS); SELF ASSEMBLY; SILICON; SPECTROSCOPIC ANALYSIS;

SEMICONDUCTOR JUNCTIONS;

EID: 33646781281     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200566116     Document Type: Conference Paper

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