Growth parameter investigation of Al0.25Ga0.75N/GaN/ AlN heterostructures with Hall effect measurements

Semiconductor Science and Technology

Volumn 23, Issue 9, 2008, Pages

  Lisesivdin, S B ^a   Demirezen, S ^a   Caliskan, M D ^b   Yildiz, A ^c   Kasap, M ^a   Ozcelik, S ^a   Ozbay, E ^b  

^a GAZI UNIVERSITY   (Turkey)

^b BILKENT UNIVERSITY   (Turkey)

^c AHI EVRAN UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC CURRENTS; GALVANOMAGNETIC EFFECTS; HALL EFFECT;

GROWTH PARAMETERS; HALL-EFFECT MEASUREMENTS;

MAGNETIC FIELD EFFECTS;

EID: 51849153666     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/9/095008     Document Type: Article

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