Well-width dependence of interface roughness scattering in GaAs/Ga1-xAlxAs quantum wells

Superlattices and Microstructures

Volumn 22, Issue 3, 1997, Pages 263-271

  Balkan, N ^a   Gupta, R ^b   Cankurtaran, M ^c   Celik H ^c   Bayrakli, A ^c   Tiras, E ^c   Arikan, M C ^d,e  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b UNIVERSITY OF HULL   (United Kingdom)

^c HACETTEPE UNIVERSITY   (Turkey)

^d ISTANBUL UNIVERSITY   (Turkey)

^e SCIENTIFIC AND TECHNOLOGICAL RESEARCH COUNCIL OF TURKEY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

INTERFACE ROUGHNESS SCATTERING; SHUBNIKOV DE HAAS OSCILLATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031354201     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0458     Document Type: Article

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