Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 71, Issue 23, 1997, Pages 3376-3378

  Zhang, G Y ^a,b   Tong, Y Z ^a   Yang, Z J ^a   Jin, S X ^a   Li, J ^a   Gan, Z Z ^a  

^a PEKING UNIVERSITY   (China)

^b KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000975874     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120341     Document Type: Article

References (12)

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