Electronic transport characterization of HEMT structures

Solid State Technology

Volumn 43, Issue 12, 2000, Pages 130-132,-134

  Kelley, Brendan J ^a   Dodrill, B C ^a   Lindemuth, J R ^a   Du, G ^a   Meyer, J R ^b   Faraone, L ^c  

^a Lake Shore Cryotronics Inc   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; THERMAL EFFECTS;

HALL MEASUREMENTS; HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURES; QUANTITATIVE MOBILITY SPECTRUM ANALYSIS; SEMICONDUCTOR INDUSTRY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0342903233     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (9)

1. H. Morkoc, P.M. Solomon, "The HEMT: A Superfast Transistor," IEEE Spectrum, pp. 28-35, February 1984.
2. D. Roh et al., "Electron Mobility Characteristics of InxGalxAs/InAlAs/InP High Electron Mobility Transistor (HEMT) Structures Grown by Molecular Beam Epitaxy," J. of Crystal Growth, vol. 167, pp, 468-472, 1996.
3. Y. Zhang, J. Singh, "Charge Control and Mobility Studies for an AlGaN/GaN High Electron Mobility Transistor," J. Applied Physics, vol. 85, no. 1, pp. 587-594, Jan. 1, 1999.
4. M. Meyer, "The Compound Semiconductor Industry in the 1990s," Compound Semiconductor, vol. 5, no. 9, Nov/Dec 1999.
5. M. Van Hove et al., "Material and Process Related Limitations of InP HEMT Performance," Materials Science & Engineering B44, pp. 311-315, 1997.
6. D. J. Paul, "Silicon Germanium Heterostructures in Electronics: The Present and Future," Thin Solid Films Semiconductors, Vol. 321, No. 1-2, pp. 172-180, 26 May 1998.
7. W. Walukiewicz et al., "Electron Mobility in Modulation-Doped Heterostructures," Physical Review B, Vol. 30, pp. 4571-4582, 1984.
8. S. Adachi, Physical Properties of III-V Semiconductor Compounds, John Wiley & Sons, New York, 1992.
9. "Evaluation of Multilayer Transport Properties Using Quantitative Mobility Spectrum Analysis," Lake Shore Cryotronics, available upon request.