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Volumn 43, Issue 12, 2000, Pages 130-132,-134
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Electronic transport characterization of HEMT structures
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CARRIER MOBILITY;
ELECTRON GAS;
ELECTRON TRANSPORT PROPERTIES;
ENERGY GAP;
HETEROJUNCTIONS;
MAGNETIC FIELD EFFECTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SPECTRUM ANALYSIS;
THERMAL EFFECTS;
HALL MEASUREMENTS;
HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURES;
QUANTITATIVE MOBILITY SPECTRUM ANALYSIS;
SEMICONDUCTOR INDUSTRY;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0342903233
PISSN: 0038111X
EISSN: None
Source Type: Trade Journal
DOI: None Document Type: Article |
Times cited : (5)
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References (9)
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