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Volumn 43, Issue 12, 2000, Pages 130-132,-134

Electronic transport characterization of HEMT structures

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; THERMAL EFFECTS;

EID: 0342903233     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (5)

References (9)
  • 1
    • 0021375366 scopus 로고
    • The HEMT: A superfast transistor
    • February
    • H. Morkoc, P.M. Solomon, "The HEMT: A Superfast Transistor," IEEE Spectrum, pp. 28-35, February 1984.
    • (1984) IEEE Spectrum , pp. 28-35
    • Morkoc, H.1    Solomon, P.M.2
  • 2
    • 0030263108 scopus 로고    scopus 로고
    • Electron mobility characteristics of InxGalxAs/InAlAs/InP High Electron Mobility Transistor (HEMT) structures grown by molecular beam epitaxy
    • D. Roh et al., "Electron Mobility Characteristics of InxGalxAs/InAlAs/InP High Electron Mobility Transistor (HEMT) Structures Grown by Molecular Beam Epitaxy," J. of Crystal Growth, vol. 167, pp, 468-472, 1996.
    • (1996) J. of Crystal Growth , vol.167 , pp. 468-472
    • Roh, D.1
  • 3
    • 0000313592 scopus 로고    scopus 로고
    • Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
    • Jan. 1
    • Y. Zhang, J. Singh, "Charge Control and Mobility Studies for an AlGaN/GaN High Electron Mobility Transistor," J. Applied Physics, vol. 85, no. 1, pp. 587-594, Jan. 1, 1999.
    • (1999) J. Applied Physics , vol.85 , Issue.1 , pp. 587-594
    • Zhang, Y.1    Singh, J.2
  • 4
    • 0343192039 scopus 로고    scopus 로고
    • The compound semiconductor industry in the 1990s
    • Nov/Dec
    • M. Meyer, "The Compound Semiconductor Industry in the 1990s," Compound Semiconductor, vol. 5, no. 9, Nov/Dec 1999.
    • (1999) Compound Semiconductor , vol.5 , Issue.9
    • Meyer, M.1
  • 5
    • 0031073632 scopus 로고    scopus 로고
    • Material and process related limitations of InP HEMT performance
    • M. Van Hove et al., "Material and Process Related Limitations of InP HEMT Performance," Materials Science & Engineering B44, pp. 311-315, 1997.
    • (1997) Materials Science & Engineering B44 , pp. 311-315
    • Van Hove, M.1
  • 6
    • 0032068322 scopus 로고    scopus 로고
    • Silicon germanium heterostructures in electronics: The present and future
    • 26 May
    • D. J. Paul, "Silicon Germanium Heterostructures in Electronics: The Present and Future," Thin Solid Films Semiconductors, Vol. 321, No. 1-2, pp. 172-180, 26 May 1998.
    • (1998) Thin Solid Films Semiconductors , vol.321 , Issue.1-2 , pp. 172-180
    • Paul, D.J.1
  • 7
    • 0001655132 scopus 로고
    • Electron mobility in modulation-doped heterostructures
    • W. Walukiewicz et al., "Electron Mobility in Modulation-Doped Heterostructures," Physical Review B, Vol. 30, pp. 4571-4582, 1984.
    • (1984) Physical Review B , vol.30 , pp. 4571-4582
    • Walukiewicz, W.1
  • 9
    • 0342757342 scopus 로고    scopus 로고
    • Evaluation of multilayer transport properties using quantitative mobility spectrum analysis
    • available upon request
    • "Evaluation of Multilayer Transport Properties Using Quantitative Mobility Spectrum Analysis," Lake Shore Cryotronics, available upon request.
    • Lake Shore Cryotronics


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.