Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional elctron transport porperties

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1527-1531

  Miyoshi, Makoto ^a,b   Egawa, Takashi ^a   Ishikawa, Hiroyasu ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; ELLIPSOMETRY; HALL EFFECT; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

LAYER THICKNESS; LOW-TEMPERATURE MOBILITIES; STRUCTURAL PROPERTIES;

ALUMINUM COMPOUNDS;

EID: 31144465903     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1993619     Document Type: Article

References (24)

1. L. F. Eastman, IEEE Trans. Electron Devices 48, 479 (2001).
2. U. K. Mishra and Y.-F. Wu, IEEE Trans. Microwave Theory Tech. 46, 756 (1998).
3. Y.-F. Wu, J. P. Ibbetson, P. Parikh, B. P. Keller, U. K. Mishra, and D. Kapolnek, IEEE Trans. Electron Devices 48, 586 (2001).
4. T. Egawa, G. Y. Zhao, H. Ishikawa, M. Umeno, and T. Jimbo, IEEE Trans. Electron Devices 48, 603 (2001).
5. F. Bernardini and V. Fiorentini, Phys. Rev. B 56, R10024 (1997).
6. Y. Zhang, I. P. Smorchkowa, C. R. Elsass, S. Keller, J. P. Ibbetson, S. DenBaars, U. K. Mishra, and J. Singh, J. Appl. Phys. 87, 7981 (2000).
7. N. Maeda, T. Nishida, N. Kobayashi, and M. Tomizawa, Appl. Phys. Lett. 73, 1856 (1998).
8. I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. Denbaars, J. S. Speck, and U. K. Mishra, J. Appl. Phys. 86, 4520 (1999).
9. P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove, and J. Redwing, Electron. Lett. 33, 1230 (1997).
10. S. Keller, G. Parish, P. T. Fini, S. Heikman, C.-H. Chen, N. Zhang, S. P. DenBaars, U. K. Mishra, and Y.-F. Wu, J. Appl. Phys. 86, 5850 (1999).
11. U. K. Mishra and Y.-F. Wu, IEEE Trans. Microwave Theory Tech. 46, 756 (1998).
12. Y.-F. Wu, J. P. Ibbetson, P. Parikh, B. P. Keller, U. K. Mishra, and D. Kapolnek, IEEE Trans. Electron Devices 48, 586 (2001).
13. M. Miyoshi, M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Tanaka, and O. Oda, J. Cryst. Growth 272, 293 (2004).
14. T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L177 (1997).
15. O. Ambacher, J. Appl. Phys. 85, 3222 (1999).
16. G. Steude, B. K. Meyer, A. Göldner, A. Hoffmann, A. Kaschner, F. Bechstedt, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 38, L498 (1999).
17. A. F. Wright, J. Appl. Phys. 82, 2833 (1997).
18. M. Gherasimova, G. Cui, Z. Ren, J. Su, X. L. Wang, J. Han, K. Higashimine, and N. Otsuka, J. Appl. Phys. 95, 2921 (2004).
19. Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, E. T. Palacios, F. Calle, and M. Leroux, Phys. Status Solidi A 195, 93 (2003).
20. P. Venńgùs, Z. Bougrioua, J. M. Bethoux, M. Azize, and O. Tottereau, J. Appl. Phys. 97, 024912 (2005).
21. G. Martin, A. Botchkarev, A. Rockett, and H. Morko̧, Appl. Phys. Lett. 68, 2541 (1996).
22. M. Shur, B. Gelmont, and M. A. Khan, J. Electron. Mater. 25, 777 (1996).
23. L. Hsu and W. Walukiewicz, Phys. Rev. B 56, 1520 (1997).
24. D. Zanato, S. Gokden, N. Balkan, B. K. Ridley, and W. J. Schaff, Semicond. Sci. Technol. 19, 427 (2004).