Characterization of multiple carriers in GaN using variable magnetic-field hall measurements

Journal of Electronic Materials

Volumn 33, Issue 5, 2004, Pages 412-417

  Swartz, C H ^a   Tompkins, R P ^a   Myers, T H ^a   Look, D C ^b,c   Sizelove, J R ^c  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

GaN, variable magnetic field hall measurements; Hydride vapor phase epitaxy (HVPE); Quantitative mobility spectrum analysis (QMSA)

Indexed keywords

CRYSTAL LATTICES; HALL EFFECT; HYDRIDES; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; SAPPHIRE; THERMAL EXPANSION; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR-PHASE EPITAXY (HVPE); QUANTITATIVE MOBILITY-SPECTRUM ANALYSIS (QMSA); VARIABLE MAGNETIC-FIELD HALL MEASUREMENTS;

GALLIUM NITRIDE;

EID: 2442576048     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0193-8     Document Type: Conference Paper

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