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Journal of Physics Condensed Matter

Volumn 13, Issue 26, 2001, Pages 5999-6004

Evaluations of the low-field mobility in degenerate GaN/AlN heterojunctions

(5) Anderson, D R a Babiker, M a Bennett, C R a Zakhleniuk, N A b Ridley, B K c

a UNIVERSITY OF YORK (United Kingdom)

b Marconi Caswell Ltd (United Kingdom)

c UNIVERSITY OF ESSEX (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN EQUATION; EFFECTIVE MOMENTUM RELAXATION TIME; FAND HOWARD APPROXIMATION; LOW FIELD MOBILITY; POLAR OPTICAL PHONONS; QUASI-TWO DIMENSIONAL ELECTRON SYSTEM;

ALUMINUM NITRIDE; APPROXIMATION THEORY; ELECTRON MOBILITY; ELECTRONIC DENSITY OF STATES; EQUATIONS OF STATE; GALLIUM NITRIDE; PHONONS; RELAXATION PROCESSES; SEMICONDUCTOR QUANTUM WELLS;

HETEROJUNCTIONS;

EID: 0035796369 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/26/314 Document Type: Article

Times cited : (11)

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