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Volumn 27, Issue 3, 2003, Pages 205-210

Electron transport mechanism in GaN/AlGaN HEMT structures

Author keywords

GaN; LO Phonon Scattering; Momentum Relaxation

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0038411318     PISSN: 13000101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (4)

References (15)
  • 13
    • 0003953649 scopus 로고
    • Wiley, NewYork
    • nd, (Wiley, NewYork,1981), p.245.
    • (1981) nd , pp. 245
    • Sze, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.