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Volumn 27, Issue 3, 2003, Pages 205-210
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Electron transport mechanism in GaN/AlGaN HEMT structures
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Author keywords
GaN; LO Phonon Scattering; Momentum Relaxation
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Indexed keywords
ACTIVATION ENERGY;
CARRIER CONCENTRATION;
ELECTRON TRANSPORT PROPERTIES;
HALL EFFECT;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
PHONON SCATTERING;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0038411318
PISSN: 13000101
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (4)
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References (15)
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