High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

Journal of Crystal Growth

Volumn 284, Issue 3-4, 2005, Pages 297-305

  Hubbard, S M ^a   Zhao, G ^a   Pavlidis, D ^a,b,c   Sutton, W ^a   Cho, E ^b  

^a University of Michigan   (United States)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

A1. In situ laser reflectometry; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semi insulating GaN

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; NUCLEATION; OPTIMIZATION; REFLECTOMETERS; SURFACE ROUGHNESS;

ANNEALING TEMPERATURE; HETEROJUNCTION FIELD EFFECT TRANSISTOR (HFET); IN SITU LASER REFLECTOMETRY; SEMI-INSULATING GAN;

HETEROJUNCTIONS;

EID: 26044465037     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.06.022     Document Type: Article

References (20)

1. C. Wetzel, T. Suski, J.W. Ager III, E.R. Weber, E.E. Haller, S. Fisher, B.K. Meyer, R.J. Molnar, and P. Perlin Phys. Rev. Lett. 78 1997 3923
2. D.C. Look, and R.J. Molnar Appl. Phys. Lett. 70 1997 3377
3. S. Heikman, S. Keller, S.P. DenBaars, and U.K. Mishra Appl. Phys. Lett. 81 2002 439
4. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, and S.J. Pearton J. Vac. Sci. Technol. B 22 2004 120
5. Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, T. Palacios, F. Calle, and M. Leroux Phys. Stat. Sol. (A) 195 2003 93
6. Z. Bougriouaa, I. Moermana, N. Sharma, R.H. Wallis, J. Cheyns, K. Jacobs, E.J. Thrush, L. Considine, R. Beanland, J.-L. Farvacque, and C. Humphreys J. Crystal Growth 230 2001 573
7. D.C. Look, D.C. Reynolds, R.L. Jones, W. Kim, O. Aktas, A. Botchkarev, A. Salvador, and H. Morkoc Mater. Sci. Eng. B 44 1997 423
8. J. Lee, M. Lee, S. Hahm, Y. Lee, J. Lee, Y. Bae, and H. Cho MRS Internet J. Nitride Semicond. Res. 8 2003 5
9. A.E. Wickenden, D.D. Koleske, R.L. Henry, M.E. Twigg, and M. Fatemi J. Crystal Growth 260 2004 54
10. L. Considine, E.J. Thrush, J.A. Crawley, K. Jacobs, W. Van der Stricht, I. Moerman, P. Demeester, G.H. Park, S.J. Hwang, and J.J. Song J. Crystal Growth 195 1998 192
11. A. Stafford, S.J.C. Irvine, Z. Bougrioua, K. Jacobs, I. Moerman, E.J. Thrush, and L. Considine J. Crystal Growth 221 2000 142
12. M. Wormington, I. Pape, T.P.A. Hase, B.K. Tanner, and D.K. Bowen Phil. Mag. Lett. 74 1996 211
13. B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. DenBaars, and J.S. Speck Appl. Phys. Lett. 68 1996 643
14. H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel Appl. Phys. Lett. 77 2000 2145
15. G. Martinez-Criado, C.R. Miskys, A. Cros, O. Ambacher, A. Cantarero, and M. Stutzmann J. Appl. Phys. 90 2001 5627
16. K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, and S. Porowski Phys. Rev. B 60 1999 1471
17. S. Figge, T. Bottcher, S. Einfeldt, and D. Hommel J. Crystal Growth 221 2000 262
18. D.A. Wood, P.J. Parbrook, R.J. Lynch, M. Lada, and A.G. Cullis Phys. Stat. Sol. (A) 188 2001 641
19. D.D. Koleske, M.E. Coltrin, A.A. Allerman, K.C. Cross, C.C. Mitchell, and J.J. Figiel Appl. Phys. Lett. 82 2003 1170
20. J. Chen, S.M. Zhang, B.S. Zhang, J.J. Zhu, G. Feng, X.M. Shen, Y.T. Wang, H. Yang, and W.C. Zheng J. Crystal Growth 254 2003 348