Experimental confirmation by galvanomagnetic methods of a complex transport model in In0.53Ga0.47As layers deposited by MBE on SI-InP

Journal of Physics and Chemistry of Solids

Volumn 64, Issue 1, 2003, Pages 7-14

  Wolkenberg, Andrzej ^a,b   Przesławski, Tomasz ^a   Kaniewski, Janusz ^a   Regiński, Kazimierz ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b CZESTOCHOWA UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

A. Semiconductors; B. Epitaxial growth; C. Electron diffraction

Indexed keywords

CARRIER CONCENTRATION; ELECTRON DIFFRACTION; ELECTRON SCATTERING; GALVANOMAGNETIC EFFECTS; HALL EFFECT; MAGNETIC FIELDS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY;

COMPLEX TRANSPORT MODELS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037213758     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(02)00162-2     Document Type: Article

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