Dynamic NBTI of PMOS transistors and its impact on device lifetime

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 196-202

  Chen, G ^a   Chuah, K Y ^a   Li, M F ^a   Chan, Daniel S H ^a   Ang, C H ^b   Zheng, J Z ^b   Jin, Y ^b   Kwong, D L ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Chartd Semiconduct Mfg Ltd   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC SWITCHES; INTERFACES (MATERIALS); TRANSISTORS;

ULTRA THIN GATE OXIDE;

MOSFET DEVICES;

EID: 0037634588     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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