Negative bias temperature instability on Si-passivated Ge-interface

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 358-362

  Aoulaiche, M ^a,b   Kaczer, B ^a   De Jaeger, B ^a   Houssa, M ^a,b   Martens, K ^a,b   Degraeve, R ^a   Roussel, P ^a   Mitard, J ^a   De Gendt, S ^a,b   Maes, H E ^a,b   Groeseneken, G ^a,b   Meuris, M ^a   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Future pMOSFETs; Ge; High k dielectric; Metal gate; MOSFET; NBTI; Surface passivation

Indexed keywords

MOSFET DEVICES; PASSIVATION; RELIABILITY;

FUTURE PMOSFETS; GE; HIGH-K DIELECTRIC; METAL GATE; MOSFET; NBTI; SURFACE PASSIVATION;

GERMANIUM;

EID: 51549105957     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558912     Document Type: Conference Paper

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