Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 14-15

  Veloso, A ^a   Witters, L ^a   Demand, M ^a   Ferain, I ^b   Son, N J ^a   Kaczer, B ^a   Roussel, Ph J ^a   Simoen, E ^a   Kauerauf, T ^a   Adelmann, C ^a   Brus, S ^a   Richard, O ^a   Bender, H ^a   Conard, T ^a   Vos, R ^a   Rooyackers, R ^a   Van Elshocht, S ^a   Collaert, N ^a   De Meyer, K ^b   Biesemans, S ^a   Jurczak, M ^a   more..

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATION; METALS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

GATE ELECTRODES; INTEGRATION TECHNOLOGIES; METAL GATES; VLSI TECHNOLOGIES;

TECHNOLOGY;

EID: 51949085647     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588545     Document Type: Conference Paper

References (9)

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2. T. Lee et al., EDL 27(8), 640 (2006);
3. H.-S. Jung et al., VLSI Tech. Dig. 2006, 204;
4. H.-S. Jung et al., VLSI Tech. Dig. 2007, 196;
5. Collaert et al., VLSI Tech. Dig. 2005, 108;
6. B. Kaczer et al., IRPS2008 (accepted);
7. R. O'Connor et al., IRPS2008 (accepted);
8. K.L. Lee et al., VLSI Tech. Dig. 2006, 202;
9. H.Y. Yu et al., VLSI Tech. Dig. 2007, 18.