Paradigm shift for NBTI characterization in ultra-scaled CMOS technologies

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 735-736

  Denais, M ^a   Bravaix, A ^c   Huard, V ^b   Parthasarathy, C ^a,c   Guerin, C ^a,c   Ribes, G ^a   Perrier, F ^b   Mairy, M ^a   Roy, D ^b  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34250769453     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251349     Document Type: Conference Paper

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