The energy-driven hot-carrier degradation modes of nMOSFETs

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 2, 2007, Pages 225-234

  Guérin, Chloé ^a   Huard, Vincent ^b   Bravaix, Alain ^c  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Age function; Electron electron scattering (EES); Energy driven; Hot carrier; Metal oxide semiconductor (MOS); Multiple vibrational excitation (MVE); Reliability; Transistor

Indexed keywords

ELECTRON-ELECTRON INTERACTIONS; HOT CARRIERS; RELIABILITY;

AGE FUNCTION; ELECTRON-ELECTRON SCATTERING (EES); HIGH-ENERGY ELECTRONS; MULTIPLE VIBRATIONAL EXCITATION (MVE);

MOSFET DEVICES;

EID: 34548259814     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.901180     Document Type: Conference Paper

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