Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs

Solid-State Electronics

Volumn 52, Issue 10, 2008, Pages 1474-1481

  Rafhay, Quentin ^a   Clerc, Raphaël ^a   Ghibaudo, Gérard ^a   Pananakakis, Georges ^a  

^a IMEP LAHC   (France)

Author keywords

Alternative channel material; Band to band tunneling; Channel orientation; Double gate MOSFET; Source to drain tunneling

Indexed keywords

ALTERNATIVE CHANNEL MATERIAL; BAND-TO-BAND TUNNELING; CHANNEL ORIENTATION; DOUBLE GATE MOSFET; SOURCE-TO-DRAIN TUNNELING;

SCALABILITY;

EID: 51049088827     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.035     Document Type: Article

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