Electron mobility enhancement using ultrathin pure Ge on Si substrate

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 761-763

  Yeo, Chia Ching ^a   Cho, Byung Jin ^a   Gao, F ^a   Lee, S J ^a   Lee, M H ^b   Yu, C Y ^b   Liu, C W ^b   Tang, L J ^c   Lee, T W ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d Jusung Engineering Company Limited   (South Korea)

Author keywords

Effective electron mobility; Ge; High K gate dielectric

Indexed keywords

CARRIER MOBILITY; CRYSTAL GROWTH; DIELECTRIC PROPERTIES; EPITAXIAL GROWTH; MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SUBSTRATES; ULTRATHIN FILMS;

CAPPING LAYER; CRYSTAL CHANNEL LAYER; EFFECTIVE ELECTRON MOBILITY; HIGH DIELECTRIC CONSTANT GATE DIELECTRICS;

ELECTRON MOBILITY;

EID: 27144452065     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.855420     Document Type: Article

References (11)

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