Analysis of subthreshold carrier transport for ultimate DGMOSFET

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 685-691

  Jung, Hak Kee ^a,b   Dimitrijev, Sima ^a  

^a GRIFFITH UNIVERSITY   (Australia)

^b Kunsan National University   (South Korea)

Author keywords

Double gate MOSFET (DGMOSFET); Drain induced barrier lowering (DIBL); Short channel effect (SCE); Sub threshold swing(SS); Threshold voltage rolloff; Tunneling

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON TUNNELING; GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON EQUATION; QUANTUM THEORY; THRESHOLD VOLTAGE;

DOUBLE-GATE MOSFETS; DRAIN-INDUCED BARRIER LOWERING; QUANTUM TUNNELING; SHORT-CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 33645741079     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870282     Document Type: Article

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